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[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - The optimised design and characterization of 1200 V / 2.0 mΩ cm2 4H-SiC V-groove trench MOSFETs

Uchida, Kosuke, Saitoh, Yu, Hiyoshi, Toru, Masuda, Takeyoshi, Wada, Keiji, Tamaso, Hideto, Hatayama, Tomoaki, Hiratsuka, Kenji, Tsuno, Takashi, Furumai, Masaki, Mikamura, Yasuki

Year:

2015

Language:

english

File:

PDF, 531 KB

english, 2015

2

Lifetime estimation of SiC MOSFETs under high temperature reverse bias test

Uchida, Kosuke, Hiyoshi, Toru, Nishiguchi, Taro, Yamamoto, Hirofumi, Furumai, Masaki, Tsuno, Takashi, Mikamura, Yasuki

Journal:

Microelectronics Reliability

Year:

2016

Language:

english

File:

PDF, 1.24 MB

english, 2016

3

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Fast switching 4H-SiC V-groove trench MOSFETs with buried P+ structure

Wada, Keiji, Masuda, Takeyoshi, Saitoh, Yu, Tamaso, Hideto, Furumai, Masaki, Hiratsuka, Kenji, Mikamura, Yasuki, Hatayama, Tomoaki, Yano, Hiroshi

Year:

2014

Language:

english

File:

PDF, 1.15 MB

english, 2014

4

Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three-Zone Junction Termination Extension

Kitai, Hidenori, Hozumi, Yasuo, Shiomi, Hiromu, Furumai, Masaki, Omote, Kazuhiko, Fukuda, Kenji

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 361 KB

english, 2017

5

The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests

Uchida, Kosuke, Hiyoshi, Toru, Nishiguchi, Taro, Yamamoto, Hirofumi, Matsukawa, Shinji, Furumai, Masaki, Mikamura, Yasuki

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 2.00 MB

english, 2016

6

[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Low on-resistance and fast switching of 13-kV SiC MOSFETs with optimized junction field-effect transistor region

Kitai, Hidenori, Hozumi, Yasuo, Shiomi, Hiromu, Fukuda, Kenji, Furumai, Masaki

Year:

2017

File:

PDF, 726 KB

2017

7

Extensive 99% Killer Defect Free 4H-SiC Epitaxial Layer toward High Current Large Chip Devices

Wada, Keiji, Miyase, Takaya, Itoh, Hironori, Hori, Tsutomu, Doi, Hideyuki, Furumai, Masaki

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 1.61 MB

2019

8

Formation of WSi-based ohmic contacts to n-type GaAs

Takeo Oku, Masaki Furumai, Chihiro J. Uchibori, Masanori Murakami

Journal:

Thin Solid Films

Year:

1997

Language:

english

File:

PDF, 506 KB

english, 1997

9

NiGe-based ohmic contacts to n-type GaAs

Masaki Furumai, Takeo Oku, Hidenori Ishikawa, Akira Otsuki, Yasuo Koide, Tetsuo Oikawa, Masanori Murakami

Journal:

Journal of Electronic Materials

Year:

1996

Language:

english

File:

PDF, 1.95 MB

english, 1996

10

600 V -Class V-Groove SiC MOSFETs

Saitoh, Yu, Furumai, Masaki, Hiyoshi, Toru, Wada, Keiji, Masuda, Takeyoshi, Hiratsuka, Kenji, Mikamura, Yasuki, Hatayama, Tomoaki

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 991 KB

english, 2014

11

Crystalline and Electrical Properties of Mictamict TiSiN Gate Metal–Oxcide–Semiconductor Capacitors

Furumai, Kouhei, Kondo, Hiroki, Sakashita, Mitsuo, Sakai, Akira, Ogawa, Masaki, Zaima, Shigeaki

Journal:

Japanese Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 197 KB

english, 2008

12

99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD

Wada, Keiji, Terao, Takemi, Itoh, Hironori, Hori, Tsutomu, Doi, Hideyuki, Furumai, Masaki, Tanabe, Tatsuya

Journal:

Materials Science Forum

Year:

2018

Language:

english

File:

PDF, 2.08 MB

english, 2018

13

Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications

Itoh, Hironori, Enokizono, Taro, Miyase, Takaya, Hori, Tsutomu, Wada, Keiji, Doi, Hideyuki, Furumai, Masaki

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 2.13 MB

2020